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H1

Flip Chip Bonders

FPB-1s NeoForce Package Bonder for Multiple Processes

FPB-1s NeoForce
Package Bonder for Multiple Processes

FPB-1s NeoForce Package Bonder for Multiple Processes

  • Chip to Substrate package bonder for TCB process
  • Capable of handling face down process (face up process as option)
  • Capable of handling several kinds of processes such as TCB (NCP/NCF/TC-CUF), C2 and C4, and FO-WLP
  • High-accuracy bonding achieved by adopting the unique Non-vibration System (NVS) technology
  • Capable of handling high force up to 350N with Force Free Gantry (FFG)
  • High throughput achieved by short heating and cooling time with high-speed pulse heater
  • Flexibility to handle various plunge-up systems, enabling thin die handling
  • Automatic product-type changeover function with capability to bond up to 4 different product-type chips, enabling 2.5D and 3D stack packaging

Specification

ITEM DETAILS
Product Name Package Bonder
Model FPB-1s NeoForce
Bond Process Handling Capability TCB (NCP/NCF/TC-CUF), C2 and C4, FO-WLP
Bonding Accuracy ±2.5μm(3σ)based on Shinkawa standard bonding conditions
Machine UPH UPH6,000 (C4 mode/process time not included) based on Shinkawa standard bonding conditions
Bonding Force 0.3 – 350N
※The bonding process can select either low force control or high force control; no switchover during a single bond profile.
・Low force control mode:0.3 – 20N
・High force control mode:10 – 350N
Bonding Tool Setting Temperature RT – 400℃ (1℃/Step, Pulse heat)
Bonding Stage Setting Temperature RT – 110℃ (1℃/Step)
Chip Size □1 – 22mm t=0.02 – 0.7mm
Chip Wafer Size φ200mm, φ300mm
Substrate Size L : 120 – 300 mm, W : 40 – 200 mm (Max 450mm option), t : 0.2 – 2.5 mm
Bonding Direction Face down/Face up (Option/Other conditions available on request)
Options Available Communication interface SECSⅡ, HSMS and GEM
Utilities Input Power Supply Single Phase AC200V–240V±5% 50/60 Hz
(Other power supply options available on request)
Power Consumption Maximum 14.0kW
Air 570kPa(5.7kgf/cm2)300L/min  Connection: φ10 Tube × 3 spots
Vacuum Below -75kPa (-550mmHg) (gage)  Connection: φ10 Tube × 3 spots
Physical Dimensions and Mass Approx. 1,510W × 1,620D × 1,750H mm 
Approx. 2,500kg (excludes monitor display and signal tower)

※ Configuration and specifications of this machine are subject to partial modification without prior notice

FPB-1w NeoForce Package Bonder for Multiple Processes

FPB-1w NeoForce
Package Bonder for Multiple Processes

FPB-1w NeoForce Package Bonder for Multiple Processes

  • Chip-to-Wafer package bonder for TCB process
  • Capable of handling face down process (face up process as an option)
  • Capable of handling several kinds of processes such as TCB (NCP/NCF/TC-CUF), C2 and C4, and FO-WLP
  • High-accuracy bonding achieved by adopting the unique Non-vibration System (NVS) technology
  • Capable of handling high force up to 350N with Force Free Gantry (FFG)
  • High throughput achieved by short heating and cooling time with high-speed pulse heater
  • Flexibility to handle various plunge-up systems, enabling thin die handling
  • Automatic product-type changeover function with capability to bond up to 4 different product-type chips, enabling 2.5D and 3D stack packaging
  • High-productivity and space-saving footprint by adopting multiple heads

Specification

ITEM DETAILS
Product Name Package Bonder
Model FPB-1w NeoForce
Bond Process Handling Capability TCB processes (NCP/NCF/TC-CUF), C2 and C4 processes, FO-WLP process
Bonding Accuracy ±2.5 μm(3σ) Based on bonding conditions at Shinkawa
Machine UPH UPH6,000 (C4 mode / process time not included) Based on bonding conditions at Shinkawa
Bonding Force 0.3–350N
※Capable of selecting bond force control method at bonding process
However, it is not capable of switching over between low force control and high force control in the identical bond profile
・Low force control mode:0.3–20N
・High force control mode:10–350N
Bonding Tool Setting Temperature RT–400℃ (1℃/Step, Pulse heat)
Bonding Stage Setting Temperature RT–200℃ (1℃/Step)
Chip Size □1–22 mm t=0.02–0.7 mm
Chip Wafer Size φ200mm, φ300mm
Base Wafer Size φ300 mm (φ200 mm Option)
Bonding Direction Face down/Face up (Option/Other conditions available on request)
Options Available Communication interface SECSⅡ, HSMS, GEM
Utilities Input Power Supply Single Phase AC200V–240V±5% 50/60Hz
(Other power supply options available on request)
Power Consumption Maximum 14.0kW
Air 570kPa (5.7kgf/cm2) 300L/min Connection:φ10 Tube x 3 spots
Vacuum Below -75kPa (-550mmHg) (gage) Connection:φ10 Tube x 3 spots
Physical Dimensions and Mass Approx. 2,520W × 1,620D × 1,750H mm
Approx. 3,100kg (excludes monitor display and signal tower)

※ Configuration and specifications of this machine are subject to partial modification without prior notice

FPB-1ws NeoForce Package Bonder for Multiple Processes

FPB-1ws NeoForce
Package Bonder for Multiple Processes

FPB-1ws NeoForce Package Bonder for Multiple Processes

  • Chip-to-Wafer package bonder for TCB process
  • Capable of switching to Chip-to-Substrate bonding for TCB process within short period of time
  • Capable of handling face down process (face up process as an option)
  • Capable of handling several kinds of processes such as TCB (NCP/NCF/TC-CUF), C2 and C4, and FO-WLP
  • High-accuracy bonding achieved by adopting the unique Non-vibration System (NVS) technology
  • Capable of handling high force up to 350N with Force Free Gantry (FFG)
  • High throughput achieved by short heating and cooling time with high-speed pulse heater
  • Flexibility to handle various plunge-up systems, enabling thin die handling
  • Automatic product-type changeover function with capability to bond up to 4 different product-type chips, enabling 2.5D and 3D stack packaging
  • High-productivity and space-saving footprint by adopting multiple heads

Specification

ITEM DETAILS
Product Name Package Bonder
Model FPB-1ws NeoForce
Bond Process Handling Capability TCB processes (NCP/NCF/TC-CUF), C2 and C4 processes, FO-WLP process
Bonding Accuracy ±2.5 μm(3σ) Based on bonding conditions at Shinkawa
Machine UPH UPH6,000 (C4 mode / process time not included) Based on bonding conditions at Shinkawa
Bonding Force 0.3–350N
※Capable of selecting bond force control method at bonding process
However, it is not capable of switching over between low force control and high force control in the identical bond profile.
・Low force control mode:0.3–20N 
・High force control mode:10–350N 
Bonding Tool Setting Temperature RT–400℃ (1℃/Step, Pulse heat)
Bonding Stage Setting Temperature RT–200℃ (1℃/Step)
Chip Size □1–22 mm t=0.02–0.7 mm
Chip Wafer Size φ200 mm, φ300 mm
Base Wafer Size φ300 mm (φ200 mm Option) /Substrate
Bonding Direction Face down / Face up (Option/Other conditions available on request)
Options Available Communication interface SECSⅡ, HSMS, GEM
Utilities Input Power Supply Single Phase AC200V–240V±5% 50/60Hz
(Other power supply options available on request)
Power Consumption Maximum 14.0kW
Air 570kPa (5.7kgf/cm2) 300L/min Connection:φ10 Tube x 3 spots
Vacuum Below -75kPa (-550mmHg) (gage) Connection:φ10 Tube x 3 spots
Physical Dimensions and Mass Approx. 2,520W × 1,620D × 1,750H mm 
Approx. 3,100kg (excludes monitor display and signal tower)

※ Configuration and specifications of this machine may be subject to partial modification without prior notice.

LFB-1102Super Flip Chip Bonder for TCB process

LFB-1102Super
Flip Chip Bonder for TCB process

LFB-1102Super Flip Chip Bonder for TCB process

  • It is the Chip to Substrate flip chip bonder for TCB process
  • High throughput achieved by 2 Head Modular structure
  • Capable of high-speed, high-accuracy flip chip bonding by adopting probe camera technology and linear motor that applies Shinkawa NRS technology
  • Both high precision force control and position control as well as high-force bonding achieved at bond head’s Z-axis by high/low force switching function
  • Cycle time reduced by short heating and cooling with high speed pulse heater
  • Capable of various plunge-up methods as well as thin die pickup and handling
  • Molten solder detection function and high-precision Z control reduce damage on devices (under low force mode)
  • Stable NCP pre-dispense application achieved by dispense amount feedback function
  • Process monitoring and management function securing stable quality and process portability

Specification

ITEM DETAILS
Product Name Flip Chip Bonder
Model LFB-1102Super
Bonding Method Pulse heat thermocompression
Bonding Accuracy ±2μm (3σ) by Shinkawa’s standard condition
Machine Cycle Time 1.6s/chip (excludes process time) by Shinkawa’s standard condition
Bonding Force 1 - 300N
※Capable of selecting bond force control method at bonding process
・Low force control mode:1 - 50N in 0.1N increments
・High force control mode:10 - 300N in 1 N increments
Bonding Tool Setting Temperature RT.- 400℃ (in 1℃ increments pulse heat)
Bonding Stage Setting Temperature RT.-120℃
Chip Size □2 - 20mm t = 0.05 - 0.7mm
Wafer Size Max.φ300mm
Workpiece Size Width 40 - 100mm (Maximum bonding area = 90mm)
Length 120 - 250mm (Maximum bonding area = 240mm)
Thickness 0.1 - 2.5mm
Option Available Communication Interface  SECS / GEM
Utilities Electricity Single Phase AC200V±5% 50/60 Hz 30 A and higher 
2spots required (if other voltage, consult us)
Power Consumption 5.0kW Maximum
CDA 500kPa (5kgf / cm2) 250L/min Connection:φ10 Tube 2spots
Vacuum Below -75kPa (gage) Connection:φ10 Tube 4spots
Physical Dimensions and Mass Approx. 3,644W × 2,191D × 1,932H mm Approx. 4,080kg 
(excludes monitor display and signal tower)

※ Specifications are subject to change without prior notice

LFB-2301 Flip Chip Bonder for TCB process

LFB-2301
Flip Chip Bonder for TCB process

LFB-2301 Flip Chip Bonder for TCB process

  • Chip-to-Wafer Flip chip bonder for NCF-TCB process
  • Capable of high-speed, high-precision flip chip bonding by adopting probe camera technology and linear motor
  • High precision control of both bond head force and Z position
  • Shinkawa’s NRS technology reduced vibration that obstructs fine pitch bonding
  • High throughput achieved by short heating and cooling with pulse heater
  • Automatic product-type changeover function with capability to bond up to 4 different product-type chips enables handling of 2.5D and 3D stack packaging
  • Capable of handling each plunge-up method and thin die pickup
  • Capable of handling 12-inch chip wafer and base wafer
  • Molten solder detection function and high-precision Z control reduce damage on devices (under low force mode)
  • Process monitoring and management function securing stable quality and process portability

Specification

ITEM DETAILS
Product Name Flip Chip Bonder
Model LFB-2301
Bonding Method Pulse heat thermocompression
Bonding Accuracy ±2μm (3σ) by Shinkawa’s standard condition
Machine Cycle Time 2.2s/chip (excludes process time) by Shinkawa’s standard condition
Bonding Force 1 - 300N
※Capable of selecting bond force control method at bonding process
However, it is not capable of switching over between low force control and high force control in the identical bond profile
・Low force Control mode:1 - 50N in 0.1N increments
・High force Control mode:10 - 300N in 1N increments
Bonding Tool Setting Temperature RT - 400℃ (in 1℃ increments pulse heat)
Bonding Stage Setting Temperature RT - 150℃ (in 1℃ increments pulse heat)
Chip Size □2 - 20mm t=0.05-0.7mm
Chip Wafer Size φ200mm, φ300mm
Base Wafer Size φ200mm, φ300mm
Process NCF-TCB Option available:NCP-TCB, Flux-TCB
Option Available Communication Interface SECS Ⅰ/ SECS Ⅱ, HSMS, GEM
Utilities Electricity Three-phase AC 200V±5% 50/60Hz (if other voltage, consults us)
Power Consumption 5.0kW Maximum
CDA 570kPa (5.7kgf/cm2) 250L/min Connection:φ10 Tube 1spot
Vacuum Below -74kPa (-550mmHg) (gage) Connection:φ10 Tube 3spots
Physical Dimensions and Mass Approx. 3,292W×1,521D×1,701H mm Approx 3,000kg (excludes monitor display, signal tower and load port)

※ Specifications subject to change without prior notice

YSB55w High-Speed & High-Accuracy Flip Chip Bonder

YSB55w
High-Speed & High-Accuracy Flip Chip Bonder

YSB55w High-Speed & High-Accuracy Flip Chip Bonder

  • High-speed bonding through parallel processing enabled by a dual flip head and an 8-component synchronized bonding process
  • Outstanding positioning accuracy with a high-rigidity frame and control algorithms
  • Bump recognition camera for high-performance positioning alignment
  • Compact force control heads
  • Compatibility with a wide range of flip-chip sizes from 2mm square to 30mm square
  • Easy-to-configure Dipping station

Specification

ITEM DETAILS
Product Name Flip Chip Bonder
Model YSB55w
Applicable PCB L260 × W200 - L50 × W50mm
PBC Thickness 0.2 - 3.0mm
PBC Transport Direction Left to right (Option: right to left)
Bonding Capability 13,000 UPH (under optimal conditions, includes processing time)
Bonding Accuracy ±5μm (3σ)
Component Supply Configuration 12 inch wafers
Applicable Components □2 to 30 mm
Power Supply 3-Phase AC 200/208/220/240/380/400/416V ±10% 50/60Hz
Air Supply Source 0.5MPa or more, in clean, dry state
External Dimensions L2,090 × D1,866 × H1,550mm (YSB55w main unit & wafer feed unit)
Weight Approx. 3,500kg (YSB55w main unit & wafer feeder unit)

※ Specifications subject to change without prior notice